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| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3019CSM HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) * SILICON PLANAR EPITAXIAL NPN TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) * CECC SCREENING OPTIONS AVAILABLE A 1.40 (0.055) max. 2.54 0.13 (0.10 0.005) 3 2 1 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 0.76 0.15 (0.03 0.006) 0.31 rad. (0.012) * SPACE QUALITY LEVELS AVAILABLE * HIGH SPEED SATURATED SWITCHING A = 1.02 0.10 (0.04 0.004) PAD 1 - Base Underside View PAD 2 - Emitter PAD 3 - Collector APPLICATIONS: For high reliablitity general purpose applications requiring small size and low weight devices. SOT23 CERAMIC (CSM) LCC1 PACKAGE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tj Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation Derate above 50C Thermal Resistance Junction to Ambient Max Junction Temperature Storage Temperature 140V 80V 7V 1A 350mW 2.00mW / C 350C / W 200C -55 to 200C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter VCEO* V(BR)CBO* V(BR)EBO* ICBO IEBO VCE(sat)* VBE(sat)* Collector - Emitter Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage SEME 2N3019CSM Test Conditions IC = 10mA IC = 10A IE = 10A VCB = 90V VCB = 90V Tamb = 150C VEB = 5V IC = 150mA IC = 500mA IC = 150mA IC = 0.1mA IC = 10mA IC = 150mA IC = 500mA IC = 1A Tamb = -55C IC = 150mA IB = 15mA IB = 50mA IB = 15mA VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 10V VCE = 0.5V IC = 0 VBE = 0 VBE = 0 Min. 80 140 7 Typ. Max. Unit V V V 10 10 10 0.20 0.50 1.1 nA A nA V V 50 90 100 50 15 40 300 -- hFE* DC Current Gain t* Pulse test tp = 300s , 2% DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter fT CEBO CCBO hfe NF Transition Frequency Capacitance Input Capacitance Small Signal Current Gain Noise Figure Test Conditions IC = 50mA VEB = 0.5V VCB = 10V IC = 1mA IC = 100A VCE = 10V IC = 0 IE = 0 VCE = 5V VCE = 10V Rg = 1K f = 20MHz f = 1.0MHz f = 1.0MHz f = 1kHz f = 1kHz Min. 100 Typ. Max. Unit MHz 60 12 pF pF -- db 80 400 4 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 1/94 |
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